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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
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10.1063/1.3544065
/content/aip/journal/jap/109/2/10.1063/1.3544065
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3544065

Figures

Image of FIG. 1.
FIG. 1.

FTIR spectra of (a) undoped c-BN film, (b) Si-doped, and (c) RTA-treated Si-doped c-BN film. The Si concentration is for the Si-doped c-BN films and the RTA is performed at in atmosphere for 3 min.

Image of FIG. 2.
FIG. 2.

The I-V curves of the c-BN films after RTA treatment with different conditions: (a) the linear and (b) the logarithmic scale. The I-V characteristics for the c-BN film with Si without RTA treatment are also added in Fig. 2.

Image of FIG. 3.
FIG. 3.

The resistance of Si-doped c-BN films at room temperature as a function of the Si concentration.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the electrical conductivity of c-BN films with various Si concentrations ranging from 0 to .

Image of FIG. 5.
FIG. 5.

The activation energies of Si impurities (AB region) as a function of Si concentration. The inset shows the diagram of Davis–Mott energy band model.

Tables

Generic image for table
Table I.

RTA process parameters of the c-BN films with Si concentration.

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/content/aip/journal/jap/109/2/10.1063/1.3544065
2011-01-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3544065
10.1063/1.3544065
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