FTIR spectra of (a) undoped c-BN film, (b) Si-doped, and (c) RTA-treated Si-doped c-BN film. The Si concentration is for the Si-doped c-BN films and the RTA is performed at in atmosphere for 3 min.
The I-V curves of the c-BN films after RTA treatment with different conditions: (a) the linear and (b) the logarithmic scale. The I-V characteristics for the c-BN film with Si without RTA treatment are also added in Fig. 2.
The resistance of Si-doped c-BN films at room temperature as a function of the Si concentration.
Temperature dependence of the electrical conductivity of c-BN films with various Si concentrations ranging from 0 to .
The activation energies of Si impurities (AB region) as a function of Si concentration. The inset shows the diagram of Davis–Mott energy band model.
RTA process parameters of the c-BN films with Si concentration.
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