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Surface modification of a ferroelectric polymer insulator for low-voltage readable nonvolatile memory in an organic field-effect transistor
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10.1063/1.3544308
/content/aip/journal/jap/109/2/10.1063/1.3544308
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3544308
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The structure of our pentacene FeFET with a physicochemically modified P(VDF-TrFE) insulator.

Image of FIG. 2.
FIG. 2.

The AFM images and the morphological profiles of the P(VDF-TrFE) layers and corresponding pentacene films (a) with no treatment, (b) with the single treatment for 10 s, and (c) with the single UVO treatment for 10 min. Morphological profiles of each film were obtained along the black dotted lines in the AFM images. The inset shows the contact angle of each P(VDF-TrFE) layer.

Image of FIG. 3.
FIG. 3.

(a) The transfer curves of two FeFETs with the bare and single treated P(VDF-TrFE) layers as a function of the gate voltage at a fixed drain voltage of −20 V. Here, open circles and open triangles represent the bare and single treated cases, respectively. (b) The mobility and the rms roughness of the P(VDF-TrFE) layer as a function of the exposure time of the plasma. (c) The transfer curves of two FeFETs with the bare and single UVO treated P(VDF-TrFE) layers as a function of the gate voltage at a fixed drain voltage of −20 V. Here, open circles and open triangles represent the bare and UVO treated cases, respectively. (d) The turn-on voltage of the FeFET and the contact angle of the P(VDF-TrFE) layer as a function of the exposure time of UVO.

Image of FIG. 4.
FIG. 4.

The AFM images and the morphological profiles of the P(VDF-TrFE) layers and corresponding pentacene films (a) with the -UVO treatment and (b) with UVO- treatment. (c) The transfer curves of two FeFETs with the P(VDF-TrFE) layers treated by -UVO and UVO-. Here, open diamonds and open squares represent the FeFET with the P(VDF-TrFE) layer treated by -UVO and that by UVO-, respectively.

Image of FIG. 5.
FIG. 5.

(a) Polarization hysteresis loops of two MIM capacitors with the bare and UVO- treated P(VDF-TrFE) layers. (b) Polarization hysteresis loops under voltage-application cycles of . Here, open circles and open squares represent the bare and UVO- treated cases, respectively. (c) Nonvolatile memory properties of two FeFETs with the bare and single treated P(VDF-TrFE) layers in terms of the drain current as a function of the retention time. The dotted and solid lines represent the bare and single treated cases, respectively. (d) Nonvolatile memory properties of two FeFETs with the P(VDF-TrFE) layers treated by UVO- and -UVO in terms of the drain current as a function of the retention time. The dashed-dotted and dashed lines represent the -UVO and UVO- treated cases, respectively.

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/content/aip/journal/jap/109/2/10.1063/1.3544308
2011-01-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface modification of a ferroelectric polymer insulator for low-voltage readable nonvolatile memory in an organic field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3544308
10.1063/1.3544308
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