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Minority electron mobilities in GaAs, , and calculated within an ensemble Monte Carlo model
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10.1063/1.3533963
/content/aip/journal/jap/109/3/10.1063/1.3533963
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3533963

Figures

Image of FIG. 1.
FIG. 1.

Calculated bulk band structure along high symmetry axis. The zero energy is set at the top of the uppermost valence band.

Image of FIG. 2.
FIG. 2.

Calculated total DOS for GaAs (solid line), (dashed) and (dotted). The calculation accounts for the three first valence and the three first conduction bands. The zero energy is set at the top of the uppermost valence band. (a) Total DOS for electrons and holes. (b) Zoom around the bottom of the first conduction band.

Image of FIG. 3.
FIG. 3.

Composition dependence of the first conduction band valleys energy minima (calculated from the top of the first valence band) and spin-orbit splitting in (direct band gap: solid line; : short dashed; : long dashed; and spin splitting: dotted).

Image of FIG. 4.
FIG. 4.

Calculated in GaAs for hole density values of (a), (b), (c), and (d). The hole SPE region boundaries are shown by thick solid lines.

Image of FIG. 5.
FIG. 5.

Calculated electron-LOPCM interaction rates for emission (a) and absorption (b) processes vs initial electron energy in GaAs for hole density values of (solid line), (long dashed), (short dashed), and (dotted). The unscreened electron-POP interaction rates are drawn with a thick solid line.

Image of FIG. 6.
FIG. 6.

Calculated minority electron mobility versus hole doping in GaAs: electron-LOPCM model (solid line), electron-unscreened POP model (dashed). Experimental mobilities are shown by circles (Ref. 5) and open triangles (Ref. 3).

Image of FIG. 7.
FIG. 7.

Minority electron mobility vs hole doping in (dashed) and (solid line) as calculated with the electron-LOPCM model. Experimental mobilities for are shown by open triangles (Ref. 4).

Tables

Generic image for table
Table I.

Calculated 0 K heavy and light hole band effective masses along high symmetry directions, direct band gap energies, spin splitting, and energy differences between the bottom of the conduction band valley and the bottom of satellite valleys. Energies are expressed in electron volt and effective masses in units of the free-electron mass .

Generic image for table
Table II.

EMC parameters for the valleys in GaAs, InAs, and GaSb used for the calculations. In order: lattice parameter, static and infinite dielectric constants, electron and hole acoustical deformation potentials, hole nonpolar deformation potential, electron intervalley deformation potentials, zone center LO phonon energy, zone center TO phonon energy, and electron intervalley phonon energies. (In the electron intervalley parameters, the involved valleys and phonon branches are indicated in superscript and subscript, respectively.)

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/content/aip/journal/jap/109/3/10.1063/1.3533963
2011-02-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAs0.50Sb0.50 calculated within an ensemble Monte Carlo model
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3533963
10.1063/1.3533963
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