1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Composition and strain in thin virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction
Rent:
Rent this article for
USD
10.1063/1.3536508
/content/aip/journal/jap/109/3/10.1063/1.3536508
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3536508

Figures

Image of FIG. 1.
FIG. 1.

Schematic of (a) SiGe virtual substrate and (b) of a strained-Si layer on an ultrathin SiGe buffer including a buried part with point defect supersaturation at low temperature initiating the early relaxation.

Image of FIG. 2.
FIG. 2.

Fitting of Ge–Ge band with asymmetrical [Eq. (1)] and Gaussian functions. The example of the best choice for and points used in Eq. (1) is also shown.

Image of FIG. 3.
FIG. 3.

(a) Raman spectra for SiGe/Si samples with and different Ge content. (b) Raman spectra for strained SiGe/Si samples with different Ge content.

Image of FIG. 4.
FIG. 4.

(a) Si–Si, (b) Si–Ge, and (c) Ge–Ge Raman peak position vs Ge content determined by HRXRD.

Image of FIG. 5.
FIG. 5.

Raman shift in (a) Si–Si, (b) Si–Ge, and (c) Ge–Ge peak as a function of Ge content. Dotted lines correspond to the dependence of vs Ge content for fully strained samples and dashed line for fully relaxed samples.

Image of FIG. 6.
FIG. 6.

Deviation of Ge content obtained from Raman and XRD data vs Ge content determined by HRXRD measurements.

Image of FIG. 7.
FIG. 7.

The various baselines that can be chosen in calculating the intensities of the Si–Si, Si–Ge, and Ge–Ge modes. The black dashed line indicates the baselines used in this work.

Image of FIG. 8.
FIG. 8.

Intensities ratio vs Ge content, x from the experimental data (symbols) and (a) from Eq. (16) at (gray line) and (black line) and (b) from Eq. (17) at (gray line) and (black line).

Image of FIG. 9.
FIG. 9.

(a) Raman spectra of sample 1797, 1669, 1799, and 1800 with increasing Ge content collected at 514 nm excitation wavelength. The strained-Si peak is observed between the Si substrate peak at and the Si–Si band from the SiGe layer. (b) Fitting of Raman spectrum for sample 1797 with three Lorentzian functions.

Image of FIG. 10.
FIG. 10.

Raman spectra for samples 1797, 1669, and 1799 collected at (a) 488 nm excitation and (b) at 325 nm excitation wavelength.

Tables

Generic image for table
Table I.

Nominal thickness and composition for samples with s-Si on SiGe virtual substrate [related to structures from Fig. 1(b)].

Generic image for table
Table II.

The calculated Ge concentration and relaxation factor for samples measured by XRD and Raman techniques [related to structures from Fig. 1(a)].

Generic image for table
Table III.

Shift in Si–Si peak , stress, and strain for s-Si layer obtained from Raman spectra at different excitation wavelengths [related to structures from Fig. 1(b)].

Generic image for table
Table IV.

Ge content, relaxation factor, and strain in SiGe layers obtained from XRD and Raman measurements [related to structures from Fig. 1(b)].

Loading

Article metrics loading...

/content/aip/journal/jap/109/3/10.1063/1.3536508
2011-02-01
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition and strain in thin Si1−xGex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3536508
10.1063/1.3536508
SEARCH_EXPAND_ITEM