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Fabrication of submicron intrinsic Josephson junction stacks
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10.1063/1.3544037
/content/aip/journal/jap/109/3/10.1063/1.3544037
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3544037
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of sample preparation. (a) An LSCO rod is cleaved. The long direction is aligned to the -axis. (b) An optical microscope image after cleaving. A shiny surface of the -plane is obtained as shown inside the dotted square. (c) Tiny specimens are cut out from the cleaved rod by a wire saw, and one of the tiny pieces is fixed onto the substrate by polyimide adhesive. Silver epoxy is glued on the LSCO specimen to make four electrodes. (d) An optical microscope image of a sample. This picture was taken after a microbridge was formed [see Fig. 2(a) ].

Image of FIG. 2.
FIG. 2.

Schematic of FIB process. (a) Fabrication of a microbridge by FIB etching. (b) Two slits are formed by FIB etching from the -axes direction. (c) A technique to fabricate a fine structure using FIB etching. This picture shows a cross-section of the microbridge viewed from the direction of the dotted arrow in (a). The microbridge is slightly tilted to compensate for the finite angle of the ion beam. (d) A SIM image of the IJJ stack “F#29.” The right hand shows the crystal structure of LSCO and a schematic of the IJJ array.

Image of FIG. 3.
FIG. 3.

A snapshot of an curve of the LSCO IJJ stack F#29. The arrows indicate the course of the current ramp. The retrapping current is represented by the central arrow.

Image of FIG. 4.
FIG. 4.

A schematic of the developed process. (a) FIB etching was performed from the direction of the -axes to form two slits. Here the two slits do not overlap along the -axis. (b) A SIM image of “FA#8” [taken after the process (a)]. (c) Argon ion etching to develop the upper slit. (d) An LSCO IJJ stack with a small number of junctions is formed.

Image of FIG. 5.
FIG. 5.

Evolution of the resistance of FA#8. The dashed curve is of the microbridge, as of Fig. 2(a) . The dotted curve is of after the first argon etching for 3 min. The solid curve is of after the second argon etching for 3 more min (6 min. total). The right axis is the scale for the black dashed curve while the left is for the dotted and the solid curves.

Image of FIG. 6.
FIG. 6.

curves of the IJJ stack FA#8. (a) An curve after 3 min etching (corresponding to the dotted curve in Fig. 5 ). (b) An curve after three more min etching (corresponding to the solid curve in Fig. 5 ). The white arrows indicate the course of the current ramp. (c) Enlarged figure of the box in (b). The numbers show indexes of the resistive branch.

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/content/aip/journal/jap/109/3/10.1063/1.3544037
2011-02-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of submicron La2−xSrxCuO4 intrinsic Josephson junction stacks
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3544037
10.1063/1.3544037
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