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Electronic structure analysis of threading screw dislocations in 4H–SiC using electron holography
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Image of FIG. 1.
FIG. 1.

(a) Transmission electron bright field micrograph of a holography sample showing typical area of interest as indicated by the white box; (b) schematic cross-sectional illustration of the foil showing the desired position of the dislocation space charge cylinder within the foil thickness and the “dead layer” at the surfaces of the TEM foil. Note that the space charge cylinder diameter is much smaller than the foil thickness.

Image of FIG. 2.
FIG. 2.

(a) Reconstructed phase image of an area containing a dislocation with the position of the line scan marked in the figure. Contrast variation from black to white corresponding to phase shift in radian; (b) corresponding phase and amplitude profiles from line indicated in (a); (c) measured and simulated potential line-scan across the dislocation. Space charge region is indicated by gray box.

Image of FIG. 3.
FIG. 3.

Band structure at the dislocation. and mark the valence and conduction bands. , marked by dashed dotted line, is the Fermi level. and are the ionization and dislocation potential energies, respectively. and are the energy difference between the Fermi level and the trap level and the energy difference between the conduction band edge and the Fermi level, respectively.


Generic image for table
Table I.

Electron holography measurement results.

Generic image for table
Table II.

Calculated values for , , , and .


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Scitation: Electronic structure analysis of threading screw dislocations in 4H–SiC using electron holography