The optical microscope images of the patterned arrays. The lateral size of the square elements is with the separation spacing of (left) and (right), respectively. , , and are the major crystallographic crystal axis directions of GaAs(100).
The magnetic Kerr hysteresis loops of the continuous GaAs(100)/Fe(12 ML)/Au(3 nm) film when the magnetic field is applied along , , and  directions of the GaAs(100), respectively. The line indicated by the arrow in (c) is the theoretical magnetization curve calculated by the total free energy density expression with the parameters in Table I obtained by FMR.
The focused MOKE hysteresis loops of an individual element at the center of the GaAs(100)/Fe(12 ML)/Au(3 nm) patterned arrays with element size and different separations of and , respectively, in three crystallographic directions of the GaAs(100). The insets of (d) and (e) are the MFM images at the remanent state. The lines indicated by the arrows in (c) and (f) are the theoretical magnetization curves calculated by the total free energy density expression with the parameters in Table I obtained by FMR.
The angular dependence of the resonance field on the in-plane orientation of GaAs(100)/Fe(12 ML)/Au(3 nm) patterned films with an element edge length of and with different separations between the elements. refers to the  direction of GaAs(100), the hard direction.
The values of the magnetic parameters determined by fitting of the experimental data from FMR. “” represents the interelement separation, “” is the edge length of the element. stands for the saturation field.
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