(a) Temperature dependence of electrical resistivity of the composite films [heating rate ] and (b) Kissinger’s plot of the films.
XPS spectra of and of the films.
XRD patterns of (a) the GST and thin films annealed at for 5 min and (b) the thin films annealed at different temperature for 5 min. The inset shows (200) diffraction peaks of the films.
TEM image of films after heating at for 5 min.
AFM images of the GST and thin films annealed at for 5 min.
XRR results of the as-deposited and crystallized films.
Resistance voltage characteristics of a PCM cell with (a) GST and (b) films at different voltage pulse widths. (c) Resistance voltage characteristic of GST, and based PCM cells and (d) endurance characteristics of a PCM cell with the films.
Crystallization activation energy , surface roughness, average grain size, thermal conductivity, measured residual stress, density changes upon crystallization of the GST, and films.
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