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Stress reduction and performance improvement of phase change memory cell by using composite films
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10.1063/1.3544432
/content/aip/journal/jap/109/3/10.1063/1.3544432
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3544432

Figures

Image of FIG. 1.
FIG. 1.

(a) Temperature dependence of electrical resistivity of the composite films [heating rate ] and (b) Kissinger’s plot of the films.

Image of FIG. 2.
FIG. 2.

XPS spectra of and of the films.

Image of FIG. 3.
FIG. 3.

XRD patterns of (a) the GST and thin films annealed at for 5 min and (b) the thin films annealed at different temperature for 5 min. The inset shows (200) diffraction peaks of the films.

Image of FIG. 4.
FIG. 4.

TEM image of films after heating at for 5 min.

Image of FIG. 5.
FIG. 5.

AFM images of the GST and thin films annealed at for 5 min.

Image of FIG. 6.
FIG. 6.

XRR results of the as-deposited and crystallized films.

Image of FIG. 7.
FIG. 7.

Resistance voltage characteristics of a PCM cell with (a) GST and (b) films at different voltage pulse widths. (c) Resistance voltage characteristic of GST, and based PCM cells and (d) endurance characteristics of a PCM cell with the films.

Tables

Generic image for table
Table I.

Crystallization activation energy , surface roughness, average grain size, thermal conductivity, measured residual stress, density changes upon crystallization of the GST, and films.

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/content/aip/journal/jap/109/3/10.1063/1.3544432
2011-02-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5–TaOx composite films
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/3/10.1063/1.3544432
10.1063/1.3544432
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