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Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates
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10.1063/1.3549160
/content/aip/journal/jap/109/4/10.1063/1.3549160
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/4/10.1063/1.3549160
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Room temperature EL of (a) the nonpolar a-plane [(inset) the peak wavelength of EL as a function of the injection current] and (b) the conventional c-plane InGaN/GaN blue-green LED for different injection currents.

Image of FIG. 2.
FIG. 2.

(Color online) Room temperature PL of (a) the nonpolar a-plane and (b) the conventional c-plane InGaN/GaN blue-green LED when the forward bias is smaller than the turn-on voltage and in the reverse bias range. (Inset) Peak wavelength of PL as a function of the applied bias.

Image of FIG. 3.
FIG. 3.

(Color online) The external quantum efficiency (EQE) and the optical output power of (a) the nonpolar a-plane and (b) the conventional c-plane InGaN/GaN blue-green LED for different injection currents.

Image of FIG. 4.
FIG. 4.

(Color online) Raman spectra measured from the a-plane InGaN/GaN LED chip with a fixed polarization direction of the incident light and with different rotational angles of the crystal orientation. The directions of the c-axis and the polarization are indicated in the inset.

Image of FIG. 5.
FIG. 5.

(Color online) Raman spectra of a-plane and c-plane LEDs compared with the spectrum from a strain-free GaN bulk. The peak positions of the E 2(high) modes for the a-plane and c-plane LEDs are show in the inset.

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/content/aip/journal/jap/109/4/10.1063/1.3549160
2011-02-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/4/10.1063/1.3549160
10.1063/1.3549160
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