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The effect of He plasma treatment on properties of organosilicate glass low-k films
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10.1063/1.3549733
/content/aip/journal/jap/109/4/10.1063/1.3549733
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/4/10.1063/1.3549733

Figures

Image of FIG. 1.
FIG. 1.

Experimental plasma reactor 1 for studying the exposure of the low-k films to He plasma: He+ ions + VUV photons and He* metastable atoms (samples 1 2), VUV photons and He* metastable atoms (sample 3), and only He* metastable atoms (sample 4).

Image of FIG. 2.
FIG. 2.

The calculated energy spectra of He+ ions incident on a surface of samples 1 and 2 in the SWD plasma column after normalization on the measured ion densities. He pressure −20 mTorr, the inputted rf power −23 W.

Image of FIG. 3.
FIG. 3.

XRF data on C atom density in CVD1 and CVD3 films after the treatment in the He plasma and by O and H atoms. The data are normalized on pristine C density in CVD1.

Image of FIG. 4.
FIG. 4.

Differential FTIR spectra of CVD1 and CVD3 films exposed to the He plasma and O and H atoms. The spectra were normalized to FTIR spectra of the pristine samples.

Image of FIG. 5.
FIG. 5.

FTIR spectroscopy measurements of the bond densities in CVD1 and CVD3 after exposure to the He plasma and O and H atoms. The measurements are normalized to the pristine densities in CVD1 for each bond.

Image of FIG. 6.
FIG. 6.

O atom loss probabilities on CVD1, CVD2, and CVD3 before and after the different treatments.

Image of FIG. 7.
FIG. 7.

The ellipsometric porosimetry data for open porosity during the toluene adsorption/desorption cycle for CVD3 samples (pristine and treated in He CCP discharge): He CCP: 20 mTorr, 15 W (left), He CCP: 60 mTorr, 10 W (right).

Tables

Generic image for table
Table I.

Plasma probe measurements for samples #1 and #2 (10 and 20 cm from the electrodes). N i- ion density; T e- electron temperature; V p and V f- plasma and float potentials; f i- ion flux on the sample surface. He pressure −20 mTorr, rf power −23 W.

Generic image for table
Table II.

Properties of low-k films used in this research.

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/content/aip/journal/jap/109/4/10.1063/1.3549733
2011-02-23
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of He plasma treatment on properties of organosilicate glass low-k films
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/4/10.1063/1.3549733
10.1063/1.3549733
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