1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Hard x-ray nano patterning using a sectioned multilayer
Rent:
Rent this article for
USD
10.1063/1.3552589
/content/aip/journal/jap/109/4/10.1063/1.3552589
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/4/10.1063/1.3552589
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of a surface of the sectioned multilayer used as the mask for hard x-ray lithography. White areas are opaque layers and dark areas are the Si transparent layers. (b) X-ray Laue diffraction profiles of the mask in direction the normal to the layers. (c) X-ray Laue diffraction profiles of the mask along the depth direction. The ratio of the spacing between the peaks in (b) and (c) provides the aspect ratio of the mask.

Image of FIG. 2.
FIG. 2.

Simulated x-ray wave field profile through a periodic multilayer mask calculated by the coupled-wave-theory. The wave field at the exit of the mask plane is reproduced at the Talbot distance.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic diagram of the hard x-ray lithography setup used in this study. X-rays are incident on the multilayer mask, and the resulting pattern is recorded on a photo-resist placed with a specified gap downstream of the mask.

Image of FIG. 4.
FIG. 4.

(a) SEM image of the line and spacing pattern recorded on the PR by the hard x-rays. The PR was positioned 30 μm downstream of the mask. The width of the line is about 97 nm. The inset shows a magnified view of the SEM image. (b) Image contrast profile along a line perpendicular to the line-and-space pattern obtained from the SEM image. At each position on the line, the intensity is averaged along the lines.

Image of FIG. 5.
FIG. 5.

(Color online) Series of SEM images on the x-ray wave field recorded on PR before and after the Talbot distance. The mask pattern is well reproduced at the Talbot distance consistent with the simulation.

Loading

Article metrics loading...

/content/aip/journal/jap/109/4/10.1063/1.3552589
2011-02-23
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hard x-ray nano patterning using a sectioned multilayer
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/4/10.1063/1.3552589
10.1063/1.3552589
SEARCH_EXPAND_ITEM