(a) SEM image of a surface of the sectioned multilayer used as the mask for hard x-ray lithography. White areas are opaque layers and dark areas are the Si transparent layers. (b) X-ray Laue diffraction profiles of the mask in direction the normal to the layers. (c) X-ray Laue diffraction profiles of the mask along the depth direction. The ratio of the spacing between the peaks in (b) and (c) provides the aspect ratio of the mask.
Simulated x-ray wave field profile through a periodic multilayer mask calculated by the coupled-wave-theory. The wave field at the exit of the mask plane is reproduced at the Talbot distance.
(Color online) Schematic diagram of the hard x-ray lithography setup used in this study. X-rays are incident on the multilayer mask, and the resulting pattern is recorded on a photo-resist placed with a specified gap downstream of the mask.
(a) SEM image of the line and spacing pattern recorded on the PR by the hard x-rays. The PR was positioned 30 μm downstream of the mask. The width of the line is about 97 nm. The inset shows a magnified view of the SEM image. (b) Image contrast profile along a line perpendicular to the line-and-space pattern obtained from the SEM image. At each position on the line, the intensity is averaged along the lines.
(Color online) Series of SEM images on the x-ray wave field recorded on PR before and after the Talbot distance. The mask pattern is well reproduced at the Talbot distance consistent with the simulation.
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