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Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter
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10.1063/1.3552888
/content/aip/journal/jap/109/5/10.1063/1.3552888
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3552888

Figures

Image of FIG. 1.
FIG. 1.

Structure of the solar cell and optical absorption coefficients of each layer.

Image of FIG. 2.
FIG. 2.

DOS distributions of each layer.

Image of FIG. 3.
FIG. 3.

Auger-corrected inverse lifetime as a function of minority carrier density. Closed circles indicate experimental results. Open symbols correspond to calculated results for different interface defect densities.

Image of FIG. 4.
FIG. 4.

Simulated solar-cell performance as a function of D int at the rear side. Broken lines indicate experimental values. Experimental and simulated (D int = 1.3 × 1019 cm−3 eV−1) J-V curves and external quantum efficiencies are also shown.

Image of FIG. 5.
FIG. 5.

(a) Dependence of solar cell parameters and S r on N A of the p-type c-Si base. (b) Dependence of solar cell parameters on S r.

Image of FIG. 6.
FIG. 6.

Comparison of simulation results of IQE for n-type nc-3C-SiC:H and a-Si:H emitter.

Tables

Generic image for table
Table I.

Simulation parameters.

Generic image for table
Table II.

Capture cross sections for each defect state.

Generic image for table
Table III.

J 0e and τ SRH extracted from data shown in Fig. 3.

Generic image for table
Table IV.

Experimental and simulated solar cell parameters.

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/content/aip/journal/jap/109/5/10.1063/1.3552888
2011-03-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3552888
10.1063/1.3552888
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