Structure of the solar cell and optical absorption coefficients of each layer.
DOS distributions of each layer.
Auger-corrected inverse lifetime as a function of minority carrier density. Closed circles indicate experimental results. Open symbols correspond to calculated results for different interface defect densities.
Simulated solar-cell performance as a function of D int at the rear side. Broken lines indicate experimental values. Experimental and simulated (D int = 1.3 × 1019 cm−3 eV−1) J-V curves and external quantum efficiencies are also shown.
(a) Dependence of solar cell parameters and S r on N A of the p-type c-Si base. (b) Dependence of solar cell parameters on S r.
Comparison of simulation results of IQE for n-type nc-3C-SiC:H and a-Si:H emitter.
Capture cross sections for each defect state.
J 0e and τ SRH extracted from data shown in Fig. 3.
Experimental and simulated solar cell parameters.
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