(Color online) Permittivity of (a) gold and (b) silicon for different n-type impurity concentrations. Solid lines correspond to the real part of the permittivity and dashed lines correspond to the imaginary part. I—ND = 5 × 1019 cm−3, II—ND = 1.6 × 1019 cm−3, III—ND = 7 × 1018 cm−3, IV—ND = 5 × 1018 cm−3.
(Color online) (a) Schematic diagram of a microring. The outer radius was fixed at 60 μm, whereas the wall width was varied between 10 and 60 μm. (b) An optical microscope image of the microring resonator array. (Inset) SEM picture of a microring.
(Color online) (a) Experimental and (b) FDTD spectra of microrings with differing wall widths. A simple schematic of the symmetric mode charge distribution is depicted in the center of Fig. 4(a).
(Color online) (a) Simulated and experimental DLSPR resonant frequency position versus wall width. Simulated electric field distribution, |E|/|E incident| in the xy plane through the center of the microring for wall widths of (b) 10, (c) 20, (d) 30, and (e) 60 μm. A scale of 0–5 is used to show the electric field enhancement profile more clearly, however, the maximum field enhancement was 20 times that of free space. In all simulations the EM wave is normally incident on the silicon microring with the electric field polarized in the x direction.
(Color online) (a) Extracted relative permittivity from simulations for a silicon microring with outer radius 60 μm and wall width 30 μm. (b) Real (n 1) and imaginary (n 2) components of the refractive index. The vertical dashed line indicates ω0, the frequency of maximum absorption.
(Color online) (a) FDTD absorption spectra for microrings with varying impurity concentrations and (b) device layer thickness. In both sets of simulations the microring parameters were as follows: outer radius 60 μm, wall width 30 μm, period 200 μm.
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