(Color online) (a) The schematic diagram of EDL formation. (b) The cross-section SEM image of the microporous SiO2 dielectric film. Scale bar: 100 nm.
(a) The gate capacitance and phase angle versus frequency with an ITO/SiO2/ITO sandwich test structure for H3PO4-treated microporous SiO2-based solid-state electrolyte. (b) Room temperature frequency dependence of the ionic conductivity for the H3PO4-treated microporous SiO2-based solid-state electrolyte.
(a) Transfer curve and corresponding channel conductivity of InGaZnO4 FETs gated by H3PO4-treated SiO2-based solid electrolyte. (b) I G-V G characteristics. (c) The pulse response measurement of InGaZnO4 FETs to a square-shaped V G with a pulsed amplitude of ± 0.6V and a constant bias of V DS = 0.6V.
(a) Left axis: transfer curve of ITO FETs gated by H3PO4-treated microporous SiO2-based solid electrolyte; Right axis: V GS dependence of the ITO channel resistance extracted from the data in transfer characteristics (R = VDS/IDS). (b) The pulse response measurement of ITO‐based FETs to a square-shaped V G with a pulsed amplitude of V + = 0.5V and V − = −2.5V, under a constant bias of V DS = 1V.
(Color online) (a) Modeled and measured transfer characteristics of the depletion-type FET with InGaZnO4 channel. (b) Modeled and measured transfer characteristics of the depletion-type FET with ITO channel.
The key parameters for the model of EDL TFTs.
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