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Electrostatic modification of oxide semiconductors by electric double layers of microporous SiO2-based solid electrolyte
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10.1063/1.3553869
/content/aip/journal/jap/109/5/10.1063/1.3553869
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3553869

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The schematic diagram of EDL formation. (b) The cross-section SEM image of the microporous SiO2 dielectric film. Scale bar: 100 nm.

Image of FIG. 2.
FIG. 2.

(a) The gate capacitance and phase angle versus frequency with an ITO/SiO2/ITO sandwich test structure for H3PO4-treated microporous SiO2-based solid-state electrolyte. (b) Room temperature frequency dependence of the ionic conductivity for the H3PO4-treated microporous SiO2-based solid-state electrolyte.

Image of FIG. 3.
FIG. 3.

(a) Transfer curve and corresponding channel conductivity of InGaZnO4 FETs gated by H3PO4-treated SiO2-based solid electrolyte. (b) I G-V G characteristics. (c) The pulse response measurement of InGaZnO4 FETs to a square-shaped V G with a pulsed amplitude of ± 0.6V and a constant bias of V DS = 0.6V.

Image of FIG. 4.
FIG. 4.

(a) Left axis: transfer curve of ITO FETs gated by H3PO4-treated microporous SiO2-based solid electrolyte; Right axis: V GS dependence of the ITO channel resistance extracted from the data in transfer characteristics (R = VDS/IDS). (b) The pulse response measurement of ITO‐based FETs to a square-shaped V G with a pulsed amplitude of V  + = 0.5V and V  = −2.5V, under a constant bias of V DS = 1V.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Modeled and measured transfer characteristics of the depletion-type FET with InGaZnO4 channel. (b) Modeled and measured transfer characteristics of the depletion-type FET with ITO channel.

Tables

Generic image for table
Table I.

The key parameters for the model of EDL TFTs.

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/content/aip/journal/jap/109/5/10.1063/1.3553869
2011-03-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrostatic modification of oxide semiconductors by electric double layers of microporous SiO2-based solid electrolyte
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3553869
10.1063/1.3553869
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