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Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
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10.1063/1.3553880
/content/aip/journal/jap/109/5/10.1063/1.3553880
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3553880
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The XRD rocking curves in c-axis for n-Al1−xInxN thin films grown on GaN/sapphire template.

Image of FIG. 2.
FIG. 2.

(Color online) The measured electron mobility for Al1−xInxN alloys with various In-contents (x) from x = 0.11 up to x = 0.2134 at T = 300 K.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The setup for the thermal gradient method for Seebeck voltage measurements of AlInN samples, (b) Seebeck voltage as a function of the temperature difference, and (c) measured Seebeck coefficients for Al1−xInxN alloys with various In-contents (x) from x = 0.11 up to x = 0.2134 at T = 300 K.

Image of FIG. 4.
FIG. 4.

(Color online) The measured power factors for Al1−xInxN alloys with various In-contents (x) from x = 0.11 up to x = 0.2134 at T = 300 K.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Cross sectional schematic of four-probe 3ω measurement setup for n-Al1−xInxN films grown on GaN/sapphire template prepared with SiO2 insulation layer, and (b) the top microscope image of the four-probe 3ω measurement setup for n-Al1−xInxN films.

Image of FIG. 6.
FIG. 6.

(Color online) Measured (a) voltage Vω and in-phase V, and (b) temperature oscillation amplitude (Tac ) as a function of frequency in logarithm scale for n-Al0.83In0.17N sample with n = 5.1 × 1018cm−3 and undoped GaN/sapphire reference sample at 300 K.

Image of FIG. 7.
FIG. 7.

(Color online) Measured (a) voltage Vω and in-phase V, and (b) temperature oscillation amplitude (Tac ) as a function of frequency in logarithm scale for n-Al0.83In0.17N sample with n = 1.6 × 1018cm−3 and undoped GaN/sapphire reference sample at 300 K.

Image of FIG. 8.
FIG. 8.

(Color online) Measured (a) voltage Vω and in-phase V, and (b) temperature oscillation amplitude (Tac ) as a function of frequency in logarithm scale for n-Al0.79In0.21N sample with n = 2.2 × 1018cm−3 and undoped GaN/sapphire reference sample at 300 K.

Image of FIG. 9.
FIG. 9.

(Color online) Measured (a) voltage Vω and in-phase V, and (b) temperature oscillation amplitude (Tac ) as a function of frequency in logarithm scale for n-Al0.89In0.11N sample with n = 1.1 × 1018cm−3 and undoped GaN/sapphire reference sample at 300 K.

Image of FIG. 10.
FIG. 10.

(Color online) The measured thermal conductivities for Al1−xInxN alloys with various In-contents (x) from x = 0.11 up to x = 0.2134 at T = 300 K.

Image of FIG. 11.
FIG. 11.

(Color online) The Z*T values for Al1−xInxN alloys with various In-contents (x) from x = 0.11 up to x = 0.2134 at T = 300 K.

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/content/aip/journal/jap/109/5/10.1063/1.3553880
2011-03-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3553880
10.1063/1.3553880
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