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n-type conductivity and phase transition in ultrananocrystalline diamond films by oxygen ion implantation and annealing
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10.1063/1.3556741
/content/aip/journal/jap/109/5/10.1063/1.3556741
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3556741

Figures

Image of FIG. 1.
FIG. 1.

Typical FESEM morphology of an oxygen ion implanted UNCD film.

Image of FIG. 2.
FIG. 2.

Uv Raman spectra of three O+-implanted UNCD films: O14 (1 × 1014 cm−2 dose, 1000 °C annealing), O15 (1 × 1015 cm−2 dose, 1000 °C annealing), and O16 (1 × 1016 cm−2 dose, 900 °C annealing). The inset is the ID/IG values and the FWHM of G peaks as a function of oxygen ion dose.

Image of FIG. 3.
FIG. 3.

(Color online) The plain view morphologies from HRTEM of O14 samples series annealed at (a) 500 °C, (b) 900 °C and (c) 1000 °C with scale bar of 5 nm, the graphs of sample annealed at (d) 500 °C and (e) 900 °C with scale bar of 2 nm, and the morphologies of STEM of O14 sample annealed at (f) 500 °C and (g) 900 °C.

Image of FIG. 4.
FIG. 4.

Uv Raman spectra obtained from a series of O14 samples after annealing at 500, 650, 800, 900, and 1000 °C, respectively, for 30 min.

Image of FIG. 5.
FIG. 5.

Dependences of (a) the values of IDia/Isum and ID/IG and (b) the FWHM values of diamond and G peaks on annealing temperature (T a ).

Tables

Generic image for table
Table I.

The Hall effect values of different samples.

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/content/aip/journal/jap/109/5/10.1063/1.3556741
2011-03-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: n-type conductivity and phase transition in ultrananocrystalline diamond films by oxygen ion implantation and annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/5/10.1063/1.3556741
10.1063/1.3556741
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