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Effect of temperature and V/III ratio on the initial growth of indium nitride using plasma-assisted metal-organic chemical vapor deposition
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10.1063/1.3530581
/content/aip/journal/jap/109/6/10.1063/1.3530581
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3530581

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Power dependent plasma emission spectra from 350 to 900 nm with a nitrogen gas flow of 40 sccm.

Image of FIG. 2.
FIG. 2.

(Color online) TEM images and SAD patterns of (a) 425 °C and (b) 525 °C grown InN crystallites. Bar: 5 nm.

Image of FIG. 3.
FIG. 3.

The top view of SEM images of the InN grown at different temperatures: (a) 375 °C, (b) 425 °C, (c) 450 °C, (d) 475 °C, (e) 525 °C, and (f) 550 °C; Inset with a high magnification.

Image of FIG. 4.
FIG. 4.

(Color online) Dependence of InN nucleation density and volume per unit substrate area on growth temperature.

Image of FIG. 5.
FIG. 5.

(Color online) Arrhenius plot for nucleation density, inset: Diffusion length varying with temperature.

Image of FIG. 6.
FIG. 6.

Low temperature (7K) PL for selected samples from Set I.

Image of FIG. 7.
FIG. 7.

Top view of SEM images of Set II varying TMIn flow: (a) 6 sccm (TMIn = 16 µg/min), (b) 10 sccm (TMIn = 26 µg/min), (c) 20 sccm (TMIn = 53 µg/min); high magnification (d) 6 sccm, (e) 10 sccm, (f) 20 sccm.

Image of FIG. 8.
FIG. 8.

(Color online) Dependence of InN nucleation density and volume per unit substrate area on V/III ratio.

Image of FIG. 9.
FIG. 9.

7 K PL comparison of InN with TMIn flow = 16 µg/min and TMIn flow = 53 µg/min.

Tables

Generic image for table
Table I.

The growth parameters of the samples; Set I and Set II.

Generic image for table
Table II.

Diffusion length and lifetime of In atoms as a function of temperature, as compared to photoluminescence FWHM.

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/content/aip/journal/jap/109/6/10.1063/1.3530581
2011-03-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of temperature and V/III ratio on the initial growth of indium nitride using plasma-assisted metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3530581
10.1063/1.3530581
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