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Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study
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10.1063/1.3554689
/content/aip/journal/jap/109/6/10.1063/1.3554689
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3554689
/content/aip/journal/jap/109/6/10.1063/1.3554689
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/content/aip/journal/jap/109/6/10.1063/1.3554689
2011-03-18
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3554689
10.1063/1.3554689
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