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Electron and hole drift velocity in chemical vapor deposition diamond
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The time-of-flight technique has been used to measure the drift velocities for electrons and holes in high-purity single-crystalline CVD diamond. Measurements were made in the temperature interval K and for electric fields between and V/cm, applied in the crystallographic direction. The study includes low-field drift mobilities and is performed in the low-injection regime to perturb the applied electric field only minimally.
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