1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal–oxide–semiconductor memory devices
Rent:
Rent this article for
USD
10.1063/1.3555087
/content/aip/journal/jap/109/6/10.1063/1.3555087
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3555087
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of the MOS structure with composite gate dielectric partly embedded with nanocrystalline germanium/silicon. (b) Schematic energy band diagram for the F–N and direct tunneling mechanism, under different conditions.

Image of FIG. 2.
FIG. 2.

(Color online) Direct tunneling current through nc-Si embedded, nc-Ge embedded, and pure SiO2 gate dielectric at different applied voltage.

Image of FIG. 3.
FIG. 3.

(Color online) Fowler–Nordheim tunneling current through nc-Si embedded, nc-Ge embedded, and pure SiO2 gate dielectric at different applied voltage.

Image of FIG. 4.
FIG. 4.

(Color online) The effective barrier height for different volume fractions of nc-Si and nc-Ge embedding.

Image of FIG. 5.
FIG. 5.

(Color online) The effective dielectric constant of the composite gate dielectric for different volume fractions of nc-Si and nc-Ge embedding.

Image of FIG. 6.
FIG. 6.

(Color online) Gate current-voltage characteristics of direct and FN tunneling in nanoparticle embedded SiO2 of MOS structures and comparison with experimental results.

Loading

Article metrics loading...

/content/aip/journal/jap/109/6/10.1063/1.3555087
2011-03-17
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal–oxide–semiconductor memory devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3555087
10.1063/1.3555087
SEARCH_EXPAND_ITEM