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Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy
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10.1063/1.3559739
/content/aip/journal/jap/109/6/10.1063/1.3559739
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3559739

Figures

Image of FIG. 1.
FIG. 1.

J-V characteristics for InGaP diodes grown on SiGe/Si and GaAs substrates obtained at 300 K. The reverse bias leakage current was below the detection limit of 0.1 nA/cm2 for both cases out to ∼−2V reverse bias.

Image of FIG. 2.
FIG. 2.

(a) DLTS spectra obtained for identical n+p InGaP diodes grown on SiGe/Si and GaAs substrates. The data shown corresponds to a measurement rate window of 0.8 s−1. (b) DLTS data for a wide range of rate windows is shown in the usual Arrhenius format from which the activation energy and capture cross section are derived. These values are listed in Table I.

Image of FIG. 3.
FIG. 3.

Steady state photocapacitance spectra obtained at 300 K for p-InGaP grown on SiGe/Si and GaAs substrates. Three deep levels with photocapacitance onset energies at Ev + 1.18 eV, Ev + 1.36 eV, and Ev + 1.78 eV are observed for both sample types. The band edge is also identified as shown in the figure.

Image of FIG. 4.
FIG. 4.

(a) Derivative of the photocapacitance at different time intervals for InGaP/SiGe indicating energy ionization onsets at Ev + 1.18 eV and Ev + 1.36 eV. (b) Optical cross section spectra for p-InGaP grown on SiGe/Si for t = 0–0.3 s. Onsets at EV + 1.36 eV and EV + 1.79 eV are observed. Similar onsets are found for InGaP/GaAs.

Image of FIG. 5.
FIG. 5.

Qualitative diagram of the deep level distribution within p-type InGaP/SiGe/Si and InGaP/GaAs bandgap representing the quantitative concentration of the levels within the bandgap. An overall higher trap concentration is observed for the sample grown on the metamorphic SiGe/Si substrate.

Tables

Generic image for table
Table I.

Trap parameters obtained from DLTS and DLOS measurements for bandgap states detected in p-type InGaP layers grown on both SiGe/Si and GaAs substrates.

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/content/aip/journal/jap/109/6/10.1063/1.3559739
2011-03-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3559739
10.1063/1.3559739
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