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Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy
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10.1063/1.3559739
/content/aip/journal/jap/109/6/10.1063/1.3559739
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3559739
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/content/aip/journal/jap/109/6/10.1063/1.3559739
2011-03-22
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of bandgap states in p-type In0.49Ga0.51P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/6/10.1063/1.3559739
10.1063/1.3559739
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