Diffraction pattern for the as-prepared In2O3 nanocrystals at ambient condition.
Transition electron microscopic patterns of as-prepared c-In2O3 nanocrystals, the inset was the SAED pattern.
Selected angle-dispersive synchrotron XRD patterns: (a) compression up to 39.75 GPa for as-prepared In2O3 nanocrystals; (b) compression up to 39.46 GPa for bulk samples; (c) decompression to ambient pressure for as-prepared In2O3 nanocrystals.
Full width at half-maximum of (440) planes: (a) the as-prepared In2O3 nanocrystals; (b) bulk samples.
(Color online) The evolution of V/V 0 for c-In2O3 and h-In2O3 with pressure: (a) the as-prepared In2O3 nanocrystals; (b) bulk samples.
The diffuse reflectivity of the as-prepared In2O3 materials, and the inset was absorption coefficient to obtain E opt.
Unit cell parameters and volume of the as-prepared In2O3 at various pressure. From 25.04 GPa, parameters for both phases were given as they were both present in significant amounts.
Unit cell parameters and volume of the bulk In2O3 at various pressures. From 30.08 GPa, parameters for both phases were given as they were both present in significant amounts.
Compressive parameters of c-In2O3 and h-In2O3
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