(Color online) Schematic epitaxial and device structure of C-doped InP/InAlGaAs LET and TL with a single InGaAs quantum well embedded in the base/active region.
(Color online) Dependence of hole concentration and resistivity of In0.52(Al0.4Ga0.6)0.48As layers on the growth temperature with the same V/III ratio and CBr4 flow rate.
Common-emitter I–V characteristics of the C-doped InP/InAlGaAs (a) HBTs and (b) LETs.
Gummel plot of the LETs. The inset shows the current gain as a function of collector current.
(Color online) EL output spectra taken at different I B at room temperature with V CE = 2 V.
(Color online) (a) Schematic representation of the band structure and refractive index profile and (b) calculated equilibrium electronic band diagram of the TL in this study.
(Color online) Transverse optical confinement factor as a function of base thickness. The arrow indicates the selected base thickness.
(Color online) Common-emitter I–V characteristics of the TL taken at 23 °C and −190 °C.
(Color online) Optical output as a function a base current taken at 23 °C and −190 °C. The inset shows the output of the TL and the LD taken at −190 °C.
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