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InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Schematic epitaxial and device structure of C-doped InP/InAlGaAs LET and TL with a single InGaAs quantum well embedded in the base/active region.

Image of FIG. 2.
FIG. 2.

(Color online) Dependence of hole concentration and resistivity of In0.52(Al0.4Ga0.6)0.48As layers on the growth temperature with the same V/III ratio and CBr4 flow rate.

Image of FIG. 3.
FIG. 3.

Common-emitter I–V characteristics of the C-doped InP/InAlGaAs (a) HBTs and (b) LETs.

Image of FIG. 4.
FIG. 4.

Gummel plot of the LETs. The inset shows the current gain as a function of collector current.

Image of FIG. 5.
FIG. 5.

(Color online) EL output spectra taken at different I B at room temperature with V CE = 2 V.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Schematic representation of the band structure and refractive index profile and (b) calculated equilibrium electronic band diagram of the TL in this study.

Image of FIG. 7.
FIG. 7.

(Color online) Transverse optical confinement factor as a function of base thickness. The arrow indicates the selected base thickness.

Image of FIG. 8.
FIG. 8.

(Color online) Common-emitter I–V characteristics of the TL taken at 23 °C and −190 °C.

Image of FIG. 9.
FIG. 9.

(Color online) Optical output as a function a base current taken at 23 °C and −190 °C. The inset shows the output of the TL and the LD taken at −190 °C.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer