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Bias dependence of spin injection into GaAs from Fe, FeCo, and (Ga,Mn)As contacts
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10.1063/1.3553932
/content/aip/journal/jap/109/7/10.1063/1.3553932
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3553932
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Basic geometry of the sample and measurement principle. Voltage V is applied between two neighboring contacts. (b) pMOKE Kerr rotation in the n-GaAs channel vs. applied magnetic field below the (Ga,Mn)As contact representing the spin polarization in the semiconductor(inset shows respective signal for an Fe contact).

Image of FIG. 2.
FIG. 2.

(Color online) 2-dimensional scans of the Kerr rotation in the n-GaAs channel, shown as a color coded map for spin injection and extraction from a contact.

Image of FIG. 3.
FIG. 3.

(Color online) 2-dimensional scans of the Kerr rotation in the n-GaAs channel, shown as a color coded map for spin injection and extraction from an Fe contact.

Image of FIG. 4.
FIG. 4.

(Color online) Comparison of the bias dependence of the injected spin polarization below the contact for (Ga,Mn)As/n-GaAs (a) and Fe/n-GaAs (b).

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/content/aip/journal/jap/109/7/10.1063/1.3553932
2011-03-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias dependence of spin injection into GaAs from Fe, FeCo, and (Ga,Mn)As contacts
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3553932
10.1063/1.3553932
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