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Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering
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10.1063/1.3556457
/content/aip/journal/jap/109/7/10.1063/1.3556457
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3556457
/content/aip/journal/jap/109/7/10.1063/1.3556457
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/content/aip/journal/jap/109/7/10.1063/1.3556457
2011-04-04
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3556457
10.1063/1.3556457
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