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Magnetoelectric memory using orthogonal magnetization states and magnetoelastic switching
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10.1063/1.3559532
/content/aip/journal/jap/109/7/10.1063/1.3559532
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3559532
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) MELRAM cell configuration: The magnetic element and electrodes are embedded in a piezoelectric matrix.

Image of FIG. 2.
FIG. 2.

(Color online) Magnetic free energy profiles (arbitrary units.) of the system as a function of the magnetization angle for three stress states. (—) No stress: two stable positions are defined for 90° and 180°. (Squares) Compressive stress along anisotropy along OY, only the 90° position is stable. (Circles) Tensile stress along anisotropy along OX, only the 180° position is stable.

Image of FIG. 3.
FIG. 3.

Magnetic element strain in the piezoelectric matrix along the OX axis for three values of the driving voltage. Apparent deformation of the element is exaggerated. White: tensile strain, black: compressive strain.

Image of FIG. 4.
FIG. 4.

Magnetic element strain in the piezoelectric matrix along the OY axis for three values of the driving voltage. Apparent deformation of the element is exaggerated.

Image of FIG. 5.
FIG. 5.

(Color online) Effect of stress on magnetization. (Left) Tensile stress is generated, magnetization is switched and set in position 2. (Right) Compressive stress is generated, magnetization is set in position 1.

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/content/aip/journal/jap/109/7/10.1063/1.3559532
2011-04-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetoelectric memory using orthogonal magnetization states and magnetoelastic switching
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3559532
10.1063/1.3559532
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