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Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
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10.1063/1.3560769
/content/aip/journal/jap/109/7/10.1063/1.3560769
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3560769
/content/aip/journal/jap/109/7/10.1063/1.3560769
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/content/aip/journal/jap/109/7/10.1063/1.3560769
2011-04-15
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3560769
10.1063/1.3560769
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