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Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells
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10.1063/1.3561433
/content/aip/journal/jap/109/7/10.1063/1.3561433
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3561433
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of layer structure for the InP/GaAs ultrathin QWs. (b) Cross sectional TEM micrograph for 2.14-ML-thick InP/GaAs ultrathin QWs.

Image of FIG. 2.
FIG. 2.

(Color online) HRXRD profile for (004) symmetric reflection for both the InP/GaAs ultrathin QWs. Profiles have been shifted vertically for clarity in viewing.

Image of FIG. 3.
FIG. 3.

(Color online) Temperature dependent C–V characteristics for ultrathin QW samples having thickness as (a) 2.14 MLs (b) 1.43 MLs. Corresponding ACD profiles for (c) 2.14 and (d) 1.43-ML-thick ultrathin QWs. All the C–V curves and ACD profiles have been shifted vertically for clarity in viewing.

Image of FIG. 4.
FIG. 4.

(Color online) ACD peak and its width as a function of temperature for the ultrathin QWs.

Image of FIG. 5.
FIG. 5.

(Color online) Variation of Debye length with temperature as a function of doping density.

Image of FIG. 6.
FIG. 6.

Experimental as well as simulated C–V profile at 50 K for the 2.14-ML-thick ultrathin QW sample.

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/content/aip/journal/jap/109/7/10.1063/1.3561433
2011-04-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3561433
10.1063/1.3561433
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