(a) Schematic of layer structure for the InP/GaAs ultrathin QWs. (b) Cross sectional TEM micrograph for 2.14-ML-thick InP/GaAs ultrathin QWs.
(Color online) HRXRD profile for (004) symmetric reflection for both the InP/GaAs ultrathin QWs. Profiles have been shifted vertically for clarity in viewing.
(Color online) Temperature dependent C–V characteristics for ultrathin QW samples having thickness as (a) 2.14 MLs (b) 1.43 MLs. Corresponding ACD profiles for (c) 2.14 and (d) 1.43-ML-thick ultrathin QWs. All the C–V curves and ACD profiles have been shifted vertically for clarity in viewing.
(Color online) ACD peak and its width as a function of temperature for the ultrathin QWs.
(Color online) Variation of Debye length with temperature as a function of doping density.
Experimental as well as simulated C–V profile at 50 K for the 2.14-ML-thick ultrathin QW sample.
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