(Color online) R-T characteristics in the c-axis of the SJJ with a submicrometer hole for #LS6. The inset shows the magnetic fields dependence of I-V characteristics with 0, 1, 3, and 5 T.
(Color online) (a) External field angle θi dependence of junction resistance Rj at 1 T and 10 K. The scanned θi in the range of 0° to 30° is shown. Resistance variation is recorded by repeatedly ramping up the angle and recording the statistics of the Rj on the θi . The inset (a) shows the scheme of the fabricated SJJs. (b) Magnified periodic peaks in the range of 18.5° to 22°. The peaks (A) and valley (B) of Rj show the resistive switching transition from zero resistance state to resistance state, respectively.
Parameters of fabricated SJJs samples with a hole.
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