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Resistive switching behaviors in Bi2Sr2CaCu2O8+d (Bi-2212) stacks
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10.1063/1.3562521
/content/aip/journal/jap/109/7/10.1063/1.3562521
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3562521

Figures

Image of FIG. 1.
FIG. 1.

(Color online) R-T characteristics in the c-axis of the SJJ with a submicrometer hole for #LS6. The inset shows the magnetic fields dependence of I-V characteristics with 0, 1, 3, and 5 T.

Image of FIG. 2.
FIG. 2.

(Color online) (a) External field angle θi dependence of junction resistance Rj at 1 T and 10 K. The scanned θi in the range of 0° to 30° is shown. Resistance variation is recorded by repeatedly ramping up the angle and recording the statistics of the Rj on the θi . The inset (a) shows the scheme of the fabricated SJJs. (b) Magnified periodic peaks in the range of 18.5° to 22°. The peaks (A) and valley (B) of Rj show the resistive switching transition from zero resistance state to resistance state, respectively.

Tables

Generic image for table
Table I.

Parameters of fabricated SJJs samples with a hole.

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/content/aip/journal/jap/109/7/10.1063/1.3562521
2011-04-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching behaviors in Bi2Sr2CaCu2O8+d (Bi-2212) stacks
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3562521
10.1063/1.3562521
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