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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
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10.1063/1.3569594
/content/aip/journal/jap/109/7/10.1063/1.3569594
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569594

Figures

Image of FIG. 1.
FIG. 1.

Photoemission measurement curves for unannealed and 700 °C 30 min annealed Ni Schottky contacts.

Image of FIG. 2.
FIG. 2.

The measured C-V curves at room temperature with frequency of 10 kHz for the unannealed and 700 °C 30 min annealed Ni Schottky contacts.

Image of FIG. 3.
FIG. 3.

The measured I-V characteristics at low bias for the (a) unannealed and (b) 700 °C 30 min annealed Ni Schottky contacts.

Image of FIG. 4.
FIG. 4.

The measured forward I-V curves for the (a) unannealed and (b) 700 °C 30 min annealed Ni Schottky contacts.

Image of FIG. 5.
FIG. 5.

Conduction band diagram of the AlGaN/GaN heterostructure at zero bias and the two-diode equivalent circuit.

Tables

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Table I.

The calculated and measured parameters for the unannealed and the annealed samples.

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/content/aip/journal/jap/109/7/10.1063/1.3569594
2011-04-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569594
10.1063/1.3569594
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