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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
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10.1063/1.3569594
/content/aip/journal/jap/109/7/10.1063/1.3569594
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569594
/content/aip/journal/jap/109/7/10.1063/1.3569594
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/content/aip/journal/jap/109/7/10.1063/1.3569594
2011-04-08
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569594
10.1063/1.3569594
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