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Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures
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10.1063/1.3569621
/content/aip/journal/jap/109/7/10.1063/1.3569621
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569621
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Model of considered ferromagnetic gate graphene structures wherein the ferromagnetic graphene can be generated intrinsically by doping and defects (Refs. 13 and 14), or extrinsically by the exchange interaction with the ferromagnetic insulator (Refs. 16 and 17). The gate electrodes are used to modulate electrostatically the magnitude of the spin current.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Transmission coefficient and (b) local density of states plotted for meV clearly showing the picture of chiral tunneling in single barrier bilayer graphene structures for (Ref. 26). Oscillation of (c) the conductance () and (d) the spin polarization (solid curve) vs the barrier height in the single ferromagnetic gate structure. In (d), the solid, (star, solid), and (, solid) curves are obtained at , , and , respectively, and the dashed line corresponds to the results obtained in the monolayer structure (Ref. 22) with the same parameters at . The Fermi energy meV, the spin splitting meV, and the gate length nm. The conductance is given in the unit of .

Image of FIG. 3.
FIG. 3.

(Color online) Spin polarization vs the potential energy around the Fermi level for different values of . The Fermi energy meV, the spin splitting meV, and the gate length nm.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Total conductance and (b) spin polarization vs the barrier height in dual gate structures for different values of : 284.5 meV (solid lines), 327 meV (dashed lines), and 370 meV (dotted-dashed lines). The device parameters are meV, meV, , nm, and nm.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Spin polarization in the case of the parallel alignment and (b) vs the barrier height in dual gate structures for different values of : 305.8 meV (solid lines), 327 meV (dashed lines), and 348.5 meV (dotted-dashed lines). The device parameters are meV, meV, nm, and nm.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Local density of states plotted for meV clearly showing the picture of charge states in a double barrier structure. (b) Oscillation of total conductance with respect to the barrier height for different well widths. The device parameters are meV, , nm, and meV.

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/content/aip/journal/jap/109/7/10.1063/1.3569621
2011-04-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-polarized current and tunneling magnetoresistance in ferromagnetic gate bilayer graphene structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569621
10.1063/1.3569621
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