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Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
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10.1063/1.3569628
/content/aip/journal/jap/109/7/10.1063/1.3569628
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569628

Figures

Image of FIG. 1.
FIG. 1.

Schematic setup for measurement of the source-drain current dependent on the gate voltage frequency (DUT = device under test).

Image of FIG. 2.
FIG. 2.

Scheme of typical source-drain current responses to variations of gate and drain voltage, called (a) gate lag and (b) drain lag.

Image of FIG. 3.
FIG. 3.

(Color online) Transfer characteristics of (Mg,Zn)O-based MESFETs with different gate materials.

Image of FIG. 4.
FIG. 4.

(Color online) Current response for and at , scaled to the steady state values obtained from fitting with stretched exponential functions.

Image of FIG. 5.
FIG. 5.

(Color online) Current response for and at , scaled to the steady state values obtained from fitting with stretched exponential functions.

Image of FIG. 6.
FIG. 6.

(Color online) Frequency-dependent measurement of gate lag using sine waves. The applied gate voltage range is depicted in the inset. The offset voltage was and the sine amplitude was at .

Image of FIG. 7.
FIG. 7.

(Color online) Frequency-dependent measurement of gate lag using sine waves. The applied gate voltage range is depicted in the inset. The offset voltage was and the sine amplitude was at .

Tables

Generic image for table
Table I.

Properties of the (Mg,Zn)O-MESFETs at room temperature.

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/content/aip/journal/jap/109/7/10.1063/1.3569628
2011-04-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569628
10.1063/1.3569628
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