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Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
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10.1063/1.3569628
/content/aip/journal/jap/109/7/10.1063/1.3569628
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569628
/content/aip/journal/jap/109/7/10.1063/1.3569628
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/content/aip/journal/jap/109/7/10.1063/1.3569628
2011-04-11
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569628
10.1063/1.3569628
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