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Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
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10.1063/1.3569848
/content/aip/journal/jap/109/7/10.1063/1.3569848
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569848

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of sample structures and conduction energy bands.

Image of FIG. 2.
FIG. 2.

(Color online) Normalized GIXRD (110)-plane ω–2θ scan curves for sample H (a) and sample L (b) at different grazing incident angles α.

Image of FIG. 3.
FIG. 3.

(Color online) Room temperature PL spectra of sample H (a) and sample L (b) as a function of an applied bias voltage. Thick lines represent measured PL spectra and thin lines represent the Gaussian fitting curve. (c) PL peak energy shift of these two samples as a function of the applied bias voltage.

Image of FIG. 4.
FIG. 4.

(Color online) Normalized PL spectra of the sample H and L at room temperature.

Image of FIG. 5.
FIG. 5.

(Color online) Normalized integrated PL intensity of the main emission for sample H and L together with the best fitting of the Arrhenius plot. The inset shows the temperature-dependent PL spectra of these two samples over the temperature range from 10 to 300 K.

Tables

Generic image for table
Table I.

Obtained fitting parameters: activation energies (EA 1 and EA 2) and constants (C 1 and C 2) together with the IQE.

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/content/aip/journal/jap/109/7/10.1063/1.3569848
2011-04-04
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569848
10.1063/1.3569848
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