1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
Rent:
Rent this article for
USD
10.1063/1.3569848
/content/aip/journal/jap/109/7/10.1063/1.3569848
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569848
/content/aip/journal/jap/109/7/10.1063/1.3569848
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/109/7/10.1063/1.3569848
2011-04-04
2014-09-03
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3569848
10.1063/1.3569848
SEARCH_EXPAND_ITEM