(Color online) Self-consistent solution of the Schrödinger and Poisson equations for an applied bias of (a) 6 kV and (b) 7 kV (). The layer sequence in nm starting from the injection barrier (IB) is given by 4/3.7/1/23/1/13.5/2/11.5/3/9.4/3/8.5/3/7.5/3/16.8/3.3/14.4. Bold numbers refer to the barriers, and the underlined number denotes the Si-doped GaAs quantum well.
Calculated characteristics for the nominal and a vanishing doping density and different sweep directions ( kV ).
(Color online) (a) Measured cw lasing spectra of device A ( mm2 laser ridge) for different current densities at 10 K. (b) Measured L-J-V characteristics (cw) for current biasing (up-sweep, 0.1 mA steps).
(Color online) Measured cw L-J-V characterisitic of device A and J-V characteristics of device B for voltage biasing at 10 K. (a) 0–3 V, stepwidth = 3 mV. (b) 3–16 V, = 10 mV.
(Color online) (a) Calculated spatial distribution of the carrier density n and electric field at 14.2 V during voltage up-sweep. (b) Calculated J-V characteristics for Ohmic boundary conditions and voltage biasing (, , N = 85, mV, T = 30 K) Inset: relation used for the simulation ().
Calculated L-V characteristics ( A , , , , ). No emission occurs during the down-sweep. Inset: Calculated gain-field characteristics for a single period (symbols) and corresponding fit to a Gaussian profile (line).
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