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Dependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH4/H2 reactive ion etching
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10.1063/1.3573536
/content/aip/journal/jap/109/7/10.1063/1.3573536
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3573536
/content/aip/journal/jap/109/7/10.1063/1.3573536
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/content/aip/journal/jap/109/7/10.1063/1.3573536
2011-04-13
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH4/H2 reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3573536
10.1063/1.3573536
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