1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH4/H2 reactive ion etching
Rent:
Rent this article for
USD
10.1063/1.3573536
/content/aip/journal/jap/109/7/10.1063/1.3573536
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3573536
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the sample structure with a mask consisting of a thick SiNX layer (1 μm thick) with a stripe space 1.5 μm wide on a thin SiO2 layer (30 nm thick) with about a 0.2 μm pitch grating. A top view of the sample is also illustrated.

Image of FIG. 2.
FIG. 2.

Cross-sectional SEM images of the gratings etched at hydrogen flow rates of (a) 0 and (b) 5 SCCM for a methane flow rate of 40 SCCM. The upper and lower images were obtained for gratings in the regions with and without the thick layers, respectively.

Image of FIG. 3.
FIG. 3.

Schematic diagrams explaining the mechanisms of selective etching and polymer deposition in the samples (a) with a thin-layer mask, corresponding to “without a thick layer,” and (b) with a thick-layer mask, corresponding to “with a thick layer.” Open and closed triangles represent ionic and radical hydrocarbon atoms, respectively. Open and closed circles represent ionic and radical hydrogen atoms, respectively. In the upper diagrams in (a) and (b), the plasma-excited hydrocarbon and hydrogen atoms are initially distributed on the mask and on the window surface like those on the bare InP surface. In addition, other ionic hydrocarbon and hydrogen atoms are mainly attracted to the charged mask.

Image of FIG. 4.
FIG. 4.

Cross-sectional SEM images of the gratings etched at pressures of (a) 5, (b) 10, and (c) 15 Pa. The upper and lower images were obtained for gratings in the regions with and without the thick layers, respectively.

Image of FIG. 5.
FIG. 5.

Cross-sectional SEM images of gratings etched at plasma powers of (a) 50, (b) 100, and (c) 150 W. The upper and lower images were obtained for the gratings in the regions with and without the thick layers, respectively.

Loading

Article metrics loading...

/content/aip/journal/jap/109/7/10.1063/1.3573536
2011-04-13
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of selectivity on plasma conditions in selective etching in submicrometer pitch grating on InP surface by CH4/H2 reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/7/10.1063/1.3573536
10.1063/1.3573536
SEARCH_EXPAND_ITEM