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Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device
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10.1063/1.3553836
/content/aip/journal/jap/109/8/10.1063/1.3553836
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3553836
/content/aip/journal/jap/109/8/10.1063/1.3553836
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/content/aip/journal/jap/109/8/10.1063/1.3553836
2011-04-20
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3553836
10.1063/1.3553836
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