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Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device
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10.1063/1.3553836
/content/aip/journal/jap/109/8/10.1063/1.3553836
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3553836
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

FinFET structure.

Image of FIG. 2.
FIG. 2.

(Color online) Validation of threshold voltage Eq. (1) against reported experimental results by K. Uchida (Ref. 20).

Image of FIG. 3.
FIG. 3.

Validation of mobility model against reported data for phonon limited mobility in K. Uchida et al. (Ref. 32)

Image of FIG. 4.
FIG. 4.

Validation of mobility model against reported experimental data in K. Uchida et al. (Ref. 32).

Image of FIG. 5.
FIG. 5.

Validation of mobility model against reported experimental data in Y. K. Choi et al. (Ref. 33).

Image of FIG. 6.
FIG. 6.

Validation of mobility model against reported experimental data in M. M. Chowdhury et al. (Ref. 34).

Image of FIG. 7.
FIG. 7.

(Color online) Validation of effective mobility model against reported experimental data in V. V. Iyengar et al. (Ref. 29).

Image of FIG. 8.
FIG. 8.

Mobility variation of irradiated device contrasted against experimental results reported by J. A. Felix et al. (Ref. 37).

Image of FIG. 10.
FIG. 10.

Validation of mobility model with TCAD simulation results of 25 nm Ω-FinFET device under gamma radiation.

Image of FIG. 9.
FIG. 9.

TCAD simulation results of 25 nm Ω-FinFET device under gamma radiation.

Image of FIG. 11.
FIG. 11.

Inversion charge density variation along channel length.

Image of FIG. 12.
FIG. 12.

(Color online) 2D Potential distribution in the channel.

Image of FIG. 13.
FIG. 13.

Validation of transfer characteristics of proposed model against reported experimental results by J. P. Colinge (Ref. 40).

Image of FIG. 14.
FIG. 14.

Validation of transfer characteristics of proposed model against reported experimental results by X. Wu (Ref. 12).

Image of FIG. 15.
FIG. 15.

Transfer characteristics for Ω-FinFET with and without traps.

Image of FIG. 16.
FIG. 16.

Variation of subthreshold swing factor with effective channel length for the proposed model and reported experimental result by B. Yu et al. (Ref. 43).

Image of FIG. 17.
FIG. 17.

Variation of subthreshold leakage current with temperature (a) for fin height of 30 nm, 60 nm and 80 nm (b) for effective length of 20 nm, 40 nm and 60 nm.

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/content/aip/journal/jap/109/8/10.1063/1.3553836
2011-04-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling of threshold voltage, mobility, drain current and subthreshold leakage current in virgin and irradiated silicon-on-insulator fin-shaped field effect transistor device
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3553836
10.1063/1.3553836
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