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Electrode dependence of filament formation in HfO2 resistive-switching memory
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10.1063/1.3567915
/content/aip/journal/jap/109/8/10.1063/1.3567915
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3567915
/content/aip/journal/jap/109/8/10.1063/1.3567915
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/content/aip/journal/jap/109/8/10.1063/1.3567915
2011-04-20
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrode dependence of filament formation in HfO2 resistive-switching memory
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3567915
10.1063/1.3567915
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