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Variable-range-hopping conduction and low thermal conductivity in chalcogenide spinel Cu y Fe4Sn12 X 32 (X = S, Se)
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10.1063/1.3569624
/content/aip/journal/jap/109/8/10.1063/1.3569624
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3569624

Figures

Image of FIG. 1.
FIG. 1.

Crystal structure of the chalcogenide spinel (X = S, Se). The Fe and Sn ions randomly occupy the crystallographic sites in octahedra, and Cu ions occupy the sites in tetrahedra.

Image of FIG. 2.
FIG. 2.

Powder x-ray diffraction patterns for sintered specimens of ( = 8.0 to 4.0). Peaks of impurity phases are marked by circles and squares.

Image of FIG. 3.
FIG. 3.

Powder x-ray diffraction patterns for as-grown specimens of ( = 8.0 to 4.0). The pattern of the sintered sample is shown only for  = 6.0. Large peaks of impurity phases are marked by circles and squares.

Image of FIG. 4.
FIG. 4.

Raman scattering spectra for ( = 8.0 to 4.0).

Image of FIG. 5.
FIG. 5.

Temperature dependences of the electrical resistivity , the thermopower , and the thermal conductivity for ( = 8.0 to 4.0). The inset of the top panel emphasizes the high-temperature () for  = 7.0 to 4.0.

Image of FIG. 6.
FIG. 6.

Plot of the logarithmic electrical resistivity vs 1000/ for ( = 8.0 to 4.0). Data sets for various are shifted upward consecutively by  = 2 for clarity. Solid lines are fits using an equation of thermal activation type conduction  = . The inset shows the starting composition dependence of the activation energy .

Image of FIG. 7.
FIG. 7.

Plot of the logarithmic electrical resistivity vs for ( = 8.0 to 4.0). Datasets for various values of are shifted upward consecutively by  = 2 for clarity. At low temperatures (large region), linearly depends on .

Image of FIG. 8.
FIG. 8.

Temperature dependences of the electrical resistivity , the thermopower , and the thermal conductivity for (X = S, Se).

Image of FIG. 9.
FIG. 9.

Plot of the logarithmic electrical resistivity vs 1000/ for (X = S, Se). Solid lines are fitted using the equation  = . The high temperature for X = Se is emphasized in the inset.

Image of FIG. 10.
FIG. 10.

Plot of the logarithmic electrical resistivity vs for (X = S, Se). At low temperatures (large region), depends linearly on . The inset shows the plot of thermopower vs ; the solid line is fitted to the data.

Tables

Generic image for table
Table I.

Starting composition of Cu , crystal composition, lattice parameter , and thermal activation energy of the carrier for ( = 8.0 to 4.0) and . The crystal composition is estimated by assuming that (a) the total number of atoms equals 56 and (b) the sum of the Fe and Sn composition equals 16.

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/content/aip/journal/jap/109/8/10.1063/1.3569624
2011-04-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Variable-range-hopping conduction and low thermal conductivity in chalcogenide spinel CuyFe4Sn12X32 (X = S, Se)
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3569624
10.1063/1.3569624
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