(Color online) Sketch figure of main carrier dynamic processes in QDs system.
(Color online) Simulated PL spectra variation with decreasing tunneling time τt at 30 K (a) and 300 K (b), respectively.
(Color online) Simulated temperature dependence of PL peak energy (a), FWHM (b), and activation energy (c) variation with decreasing tunneling time τt .
(Color online) Simulated relation of tunneling coefficient α to tunneling time τt . Hexagon: simulated data point; line: fitted curve using exponential relation.
(Color online) Temperature dependent peak energy (a), FWHM (b), and integrated intensity (c) of sample S0–S3. The dashed lines in (a) are bulk material variation using Varshni relation.
(Color online) 1 μm × 1 μm AFM images of S0–S3.
(Color online) Left axis: Value of tunneling coefficient α of sample S0–S3; Right axis: mean dot-dot distance of sample S0–S3.
Parameters used to simulate the PL spectra.
Left part: Fitted WW, SS, Ea , of sample S0–S3 according to their temperature dependent PL spectra, respectively. Right part: QDs structure parameter according to statistical AFM results.
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