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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
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10.1063/1.3572238
/content/aip/journal/jap/109/8/10.1063/1.3572238
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3572238

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sketch figure of main carrier dynamic processes in QDs system.

Image of FIG. 2.
FIG. 2.

(Color online) Simulated PL spectra variation with decreasing tunneling time τt at 30 K (a) and 300 K (b), respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Simulated temperature dependence of PL peak energy (a), FWHM (b), and activation energy (c) variation with decreasing tunneling time τt .

Image of FIG. 4.
FIG. 4.

(Color online) Simulated relation of tunneling coefficient α to tunneling time τt . Hexagon: simulated data point; line: fitted curve using exponential relation.

Image of FIG. 5.
FIG. 5.

(Color online) Temperature dependent peak energy (a), FWHM (b), and integrated intensity (c) of sample S0–S3. The dashed lines in (a) are bulk material variation using Varshni relation.

Image of FIG. 6.
FIG. 6.

(Color online) 1 μm × 1 μm AFM images of S0–S3.

Image of FIG. 7.
FIG. 7.

(Color online) Left axis: Value of tunneling coefficient α of sample S0–S3; Right axis: mean dot-dot distance of sample S0–S3.

Tables

Generic image for table
Table I.

Parameters used to simulate the PL spectra.

Generic image for table
Table II.

Left part: Fitted WW, SS, Ea , of sample S0–S3 according to their temperature dependent PL spectra, respectively. Right part: QDs structure parameter according to statistical AFM results.

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/content/aip/journal/jap/109/8/10.1063/1.3572238
2011-04-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3572238
10.1063/1.3572238
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