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Nitrogen doped-ZnO/n-GaN heterojunctions
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10.1063/1.3575178
/content/aip/journal/jap/109/8/10.1063/1.3575178
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3575178
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of (a) N doped and (b) undoped ZnO nanorods using nitrate precursor; (c) N doped and (d) undoped ZnO nanorods using acetate precursor. The scale bars are 100 nm.

Image of FIG. 2.
FIG. 2.

(Color online) Variable temperature PL spectra of (a) N doped and (b) undoped ZnO nanorods using nitrate precursor; (c) N doped and (d) undoped ZnO nanorods using acetate precursor.

Image of FIG. 3.
FIG. 3.

(Color online) Normalized PL spectra of samples prepared using different precursors at 15 K.

Image of FIG. 4.
FIG. 4.

(Color online) I-V curves of (a) doped samples with different dielectric between the rods (b) undoped samples with different metal electrode (c) ohmic contact check for the structure ITO/ZnO nanorods + SOG/Au or Ag. The inset shows ohmic contact check for Al/Ag contact on GaN.

Image of FIG. 5.
FIG. 5.

(Color online) SIMS profiles for DN (closed symbols) and DA (open symbols) samples.

Image of FIG. 6.
FIG. 6.

AES spectrum of DN sample.

Image of FIG. 7.
FIG. 7.

(a)–(b) TEM of DN and DA samples; The insets show the corresponding HRTEM images and SAED patterns (c)–(d) EELS spectra of DN and DA samples. The inset shows reference nitrogen spectrum from BN sample.

Image of FIG. 8.
FIG. 8.

(Color online) (a) Experimental and fitted I-V curve of DN sample with PMMA (b) Comparison of I-V curves of DN samples immediately as prepared and after storage in low vacuum.

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/content/aip/journal/jap/109/8/10.1063/1.3575178
2011-04-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogen doped-ZnO/n-GaN heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3575178
10.1063/1.3575178
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