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Nanoscale silicon-on-insulator deformation induced by stressed liner structures
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10.1063/1.3579421
/content/aip/journal/jap/109/8/10.1063/1.3579421
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3579421
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of the edge of the SOI/Si3N4 stressor structure.

Image of FIG. 2.
FIG. 2.

(Color online) Contour plot of CCD-based SOI (004) diffracted intensity (a.u.) under the Si3N4 feature center.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of the measured SOI (004) lattice tilt, Δχ (squares), to the BEM-calculated, depth-averaged rotation distribution (line) of the SOI layer under the Si3N4 stressor. The error bars lay within the width of the data points. Inset: cross-sectional geometry of the sample showing the direction of rotation in the x1–x3 plane.

Image of FIG. 4.
FIG. 4.

(Color online) Comparison of the measured, depth-averaged, out-of-plane strain, ε33, from SOI (004) (squares) to the BEM-calculated strain (line) of the SOI layer under the Si3N4 stressor.

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/content/aip/journal/jap/109/8/10.1063/1.3579421
2011-04-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscale silicon-on-insulator deformation induced by stressed liner structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/8/10.1063/1.3579421
10.1063/1.3579421
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