Cross-sectional TEM image of the edge of the SOI/Si3N4 stressor structure.
(Color online) Contour plot of CCD-based SOI (004) diffracted intensity (a.u.) under the Si3N4 feature center.
(Color online) Comparison of the measured SOI (004) lattice tilt, Δχ (squares), to the BEM-calculated, depth-averaged rotation distribution (line) of the SOI layer under the Si3N4 stressor. The error bars lay within the width of the data points. Inset: cross-sectional geometry of the sample showing the direction of rotation in the x1–x3 plane.
(Color online) Comparison of the measured, depth-averaged, out-of-plane strain, ε33, from SOI (004) (squares) to the BEM-calculated strain (line) of the SOI layer under the Si3N4 stressor.
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