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Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates
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10.1063/1.3579449
/content/aip/journal/jap/109/9/10.1063/1.3579449
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3579449
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional and (b) plan-view SEM images of representative GaAs NWs grown for 30 min at 620 °C on an epitaxial substrate with 4 MLs of Si. The 34.5° angle to the substrate surface formed by the NWs is highlighted in (a). (c) Detail of a majority NW tip.

Image of FIG. 2.
FIG. 2.

Plan-view SEM images of the substrate surface after (a) 10 s, (b) 30 s, and (c) 60 s of GaAs growth at 620 °C on epitaxial substrates with 4 MLs of Si. (d) NW length as a function of growth time. The substrate temperature was 620 °C during growth.

Image of FIG. 3.
FIG. 3.

Plan-view SEM images of the substrate surface after (a) 10 s and (b) 30 min of GaAs growth at 620 °C on epiready substrates with 4 MLs of Si.

Image of FIG. 4.
FIG. 4.

Plan-view SEM images of the result of GaAs growth for 30 min on epitaxial substrates with 4 MLs of Si at different substrate temperatures: (a) 580 °C, (b) 680 °C, and (c) 715 °C.

Image of FIG. 5.
FIG. 5.

(Color online) (a) ADF analysis of a GaAs NW obtained by recording images along the NW body over a length of more than 5 μm. (b) HRTEM image of a twinned region and diffractograms of the two regions indicated by the markers. (c) EDS map of a NW; dark (red) spots correspond to Ga, bright (green) to As.(d) ADF image of a NW grown at 680 °C.

Image of FIG. 6.
FIG. 6.

(Color online) (a) HRTEM image of a minority NW. The diffractogram in the inset reveals that the tip is made of WZ GaAs. (b) Low magnification ADF-STEM image of another minority NW displaying alternate stacking of WZ and ZB regions.

Image of FIG. 7.
FIG. 7.

Low temperature photoluminescence spectra of NWs grown for 30 min at 620 °C on (a) epiready and (b) epitaxial substrates, both with 4 MLs of Si. (c) Low temperature photoluminescence spectra of a sample grown at 620 °C on an epiready substrate with 1 ML of Si, where only the polycrystalline GaAs layer was found after 30 min of growth.

Image of FIG. 8.
FIG. 8.

Ga 3p and Si 2p core level photoemission recorded on different substrates. (a) Epitaxial substrates with 4 MLs of Si as grown and (b) after exposure to air. (c) Epiready GaAs(001) wafers as received from the supplier and (d) after deposition of 4 MLs of Si.

Image of FIG. 9.
FIG. 9.

As 3d core level photoemission recorded on different substrates. (a) Epitaxial substrate with 4 MLs of Si as grown and (b) after exposure to air. (c) Epiready GaAs as received from the supplier and (d) epiready substrate after deposition of 4 MLs of Si.

Image of FIG. 10.
FIG. 10.

Ga 3d core level photoemission recorded on different substrates. (a) Epitaxial substrate with 4 MLs of Si as grown and (b) after exposure to air. (c) Epiready GaAs as received from the supplier and (d) after deposition of 4 MLs of Si.

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/content/aip/journal/jap/109/9/10.1063/1.3579449
2011-05-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3579449
10.1063/1.3579449
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