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Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
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10.1063/1.3580254
/content/aip/journal/jap/109/9/10.1063/1.3580254
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3580254
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Figures 1(a)–1(c) show in situ RHEED diffraction pattern observed for samples grown at 400 °C, 450 °C, and 500 °C, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) XRD pattern for samples grown at different temperatures (a) 400 °C, (b) 450 °C, and (c) 500 °C, respectively. Inset to the figure, Figs. 2(d) and 2(e) show the wurtzite unit cell of InN with c-axis parallel and perpendicular to that of substrate for 450 °C and 500 °C growth temperatures.

Image of FIG. 3.
FIG. 3.

(Color online) Photoluminescence spectra observed for samples grown at (a) 400 °C, (b) 450 °C, and (c) 500 °C, respectively. Inset shows the theoretical curve for the variation of the bandedge with carrier concentration, along with the value determined in this study.

Image of FIG. 4.
FIG. 4.

FESEM images of the samples grown at (a) 400 °C, (b) 450 °C, and (c) 500 °C, respectively. Line scans averaged over the images are overlayed on the respective images.

Image of FIG. 5.
FIG. 5.

(Color online) XPS In (3d) core-level spectra obtained for samples grown at (a) 400 °C, (b) 450 °C, and (c) 500 °C, respectively. Inset shows the percentage composition of oxygen and ratio of In to N at different growth temperatures.

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/content/aip/journal/jap/109/9/10.1063/1.3580254
2011-05-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3580254
10.1063/1.3580254
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