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Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
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10.1063/1.3580254
/content/aip/journal/jap/109/9/10.1063/1.3580254
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3580254
/content/aip/journal/jap/109/9/10.1063/1.3580254
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/content/aip/journal/jap/109/9/10.1063/1.3580254
2011-05-09
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3580254
10.1063/1.3580254
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