1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Degradation mechanism beyond device self-heating in high power light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.3580264
/content/aip/journal/jap/109/9/10.1063/1.3580264
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3580264
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The room-temperature Raman spectrum measured from an InGaN/GaN LED die. The inset (left) shows the SEM image of the LED die on silicon submount with lens removed (Courtesy of MuAnalysis). The inset (right) shows the calibration curve which returns the junction temperature of an InGaN/GaN LED against the shift of the E 2 H mode.

Image of FIG. 2.
FIG. 2.

Normalized electro-luminance (EL) spectra from an InGaN/GaN LED for different currents. The inset shows the dependences of the three emissions on current amplitudes.

Image of FIG. 3.
FIG. 3.

Normalized electro-luminance (EL) spectra from an InGaN/GaN LED submitted to different stress currents. The inset shows the dependences of the three emissions on current amplitudes.

Image of FIG. 4.
FIG. 4.

Raman shift of the E 2 H phonon (left y-axis) and the LED junction temperature deduced there from (right y-axis).

Image of FIG. 5.
FIG. 5.

I-V characteristics of the LEDs before and after forward-current stress.

Image of FIG. 6.
FIG. 6.

L-I characteristics of the LEDs before and after ageing. A current of 2100 mA was used.

Loading

Article metrics loading...

/content/aip/journal/jap/109/9/10.1063/1.3580264
2011-05-12
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Degradation mechanism beyond device self-heating in high power light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3580264
10.1063/1.3580264
SEARCH_EXPAND_ITEM