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A non-filamentary model for unipolar switching transition metal oxide resistance random access memories
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19. Here we use an effective permittivity ɛ rather than the vacuum permittivity ɛ0 in order to incorporate screening effects. A similar argument can be found in the footnote of N. F. Mott, Metal-Insulator Transitions, 2nd Ed. (Taylor and Francis, London, 1990), p. 80.
22. N. F. Mott, Metal-Insulator Transitions, 2nd Ed. (Taylor and Francis, London, 1990), p. 128.
24.The present formula differs from Meir and Wingreen’s result by a coefficient 1/ħ. This is because in their original work, the Dyson equations in the Keldysh formalism originated from the form G = G0 + G0 ΣG, where the 1/ħ coefficient on the last term was set to 1.
26. D. N. Zubarev, Usp. Fiz. Nauk. 71, 71 (1960)
26. D. N. Zubarev [Sov. Phys. Usp. 3, 320 (1960)].
27. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, Cambridge, 2005), pp. 8–9.
28.For an explanation of Fig. 5(b), see S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1995), pp. 55–57, 65–57 66.
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