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A non-filamentary model for unipolar switching transition metal oxide resistance random access memories
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10.1063/1.3581193
/content/aip/journal/jap/109/9/10.1063/1.3581193
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3581193
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The I-V characteristic of an RRAM without electroforming (CeRAM).

Image of FIG. 2.
FIG. 2.

(Color online) The crystal structure and band diagram for NiO.

Image of FIG. 3.
FIG. 3.

(Color online) Density of states for NiO: (a) the normal case, insulator; (b) metallic NiO. W is the bandwidth.

Image of FIG. 4.
FIG. 4.

(Color online) Simulation results of the I-V curve on the metal side. Given V SET = 1.4V.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Device structure and three regions in NiO; (b) quasi-Fermi levels through the device at the RESET point, bold line for the average quasi-Fermi level.

Image of FIG. 6.
FIG. 6.

(Color online) Simulation result of the I-V curve on the insulator side. Given V SET = 1.4V.

Image of FIG. 7.
FIG. 7.

(Color online) Graphic estimation of V RESET.

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/content/aip/journal/jap/109/9/10.1063/1.3581193
2011-05-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A non-filamentary model for unipolar switching transition metal oxide resistance random access memories
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3581193
10.1063/1.3581193
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