1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Material and process optimization of correlated electron random access memories
Rent:
Rent this article for
USD
10.1063/1.3581197
/content/aip/journal/jap/109/9/10.1063/1.3581197
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3581197
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) CeAM device model with proposed mechanisms for RESET and SET switching (a), and band diagrams of NiO in ON and OFF states (b), where U-Coulomb repulsion, W -bandwidth, EF -Fermi level, and Δ < U.

Image of FIG. 2.
FIG. 2.

XPS spectra for Ni 2p (a) and O 1s (b) signals of the ligand doped NiO film. Only one Ni bond state (Ni+2) is reflected in Ni 2p3/2 and O 1s peaks at 854.5 and 530 eV respectively.

Image of FIG. 3.
FIG. 3.

Retention data for high and low resistance states up to 300°C for ligand doped NiO film.

Image of FIG. 4.
FIG. 4.

Arrhenius plot of the activation energy equal to the energy of detrapping oxygen vacancies in reactively sputtered NiO film; the inset shows the relaxation times from LRS to HRS as a function of the bake temperature.

Image of FIG. 5.
FIG. 5.

SEM micrograph (a) and x-ray diffraction patterns (b) of the NiO ultra-thin film.

Image of FIG. 6.
FIG. 6.

(Color online) Unipolar resistive memory switching of NiO films. The I-V characteristics in linear (a) and logarithmic (b) scales show wide writing and reading memory windows.

Image of FIG. 7.
FIG. 7.

(Color online) Scaling of the current in the conductive phase achieved by area scaling (a) and optimization of process conditions (b).

Image of FIG. 8.
FIG. 8.

(Color online) The I-V characteristics for standard CeRAM device (a) and optimized CeRAM device through a combination of such parameters as scaled device area, modified process, and adjusted testing conditions (b).

Image of FIG. 9.
FIG. 9.

AFM surface morphology images of NiO thin films (2 × 2 μm2) fabricated using the standard process (a) and with surface modifying layer (b).

Image of FIG. 10.
FIG. 10.

(Color online) Dispersion of set and reset voltages with respect to switching cycles in Pt/NiO/Pt memory cell based on NiO thin film fabricated using the standard (a) and modified (b) processes.

Loading

Article metrics loading...

/content/aip/journal/jap/109/9/10.1063/1.3581197
2011-05-13
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Material and process optimization of correlated electron random access memories
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3581197
10.1063/1.3581197
SEARCH_EXPAND_ITEM