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Device characterization of correlated electron random access memories
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10.1063/1.3581206
/content/aip/journal/jap/109/9/10.1063/1.3581206
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3581206
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram and (b) magnification top view image of CeRAM test structures. Encapsulated structures with varying dimensions and off resistor contact pads (upper) and direct probe (lower center) devices for I-V characterization of CeRAM.

Image of FIG. 2.
FIG. 2.

Typical I-V characteristics for (a) bipolar and (b) unipolar switching by voltage sweep.

Image of FIG. 3.
FIG. 3.

(Color online) IReset vs ICompliance at varying set compliance levels for and structure.

Image of FIG. 4.
FIG. 4.

Equivalent circuit for testing setup of CeRAM with external compliance circuitry including (1) compliance imposed by SPA, (2) parasitic capacitance from cables, probes, and contacts, (3) dielectric capacitance in off state which causes current “snapback” during set.

Image of FIG. 5.
FIG. 5.

(Color online) I-V curves for CeRAM cell programed using a compliance limit showing a max IReset of approximately .

Image of FIG. 6.
FIG. 6.

(Color online) I-V curves for CeRAM cell switching with for consecutive set and reset operations.

Image of FIG. 7.
FIG. 7.

(Color online) ROn and ROff resistance of 100 consecutive cycles at room temperature and the corresponding read margine.

Image of FIG. 8.
FIG. 8.

(Color online) Read endurance for high (ROff ) and low (ROn ) resistance states of a cell at room temperature with 0.2 V read voltage.

Image of FIG. 9.
FIG. 9.

(Color online) Nonvolatile data retention of high and low resistance states at elevated temperatures up to 300°Chx2009; for 1 h.

Image of FIG. 10.
FIG. 10.

(Color online) Simulated I-V curves for CeRAM as a function of temperature for the metal case.

Image of FIG. 11.
FIG. 11.

(Color online) Simulated I-V curves for CeRAM as a function of temperature for the insulator case.

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/content/aip/journal/jap/109/9/10.1063/1.3581206
2011-05-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Device characterization of correlated electron random access memories
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3581206
10.1063/1.3581206
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