(a) Schematic diagram and (b) magnification top view image of CeRAM test structures. Encapsulated structures with varying dimensions and off resistor contact pads (upper) and direct probe (lower center) devices for I-V characterization of CeRAM.
Typical I-V characteristics for (a) bipolar and (b) unipolar switching by voltage sweep.
(Color online) IReset vs ICompliance at varying set compliance levels for and structure.
Equivalent circuit for testing setup of CeRAM with external compliance circuitry including (1) compliance imposed by SPA, (2) parasitic capacitance from cables, probes, and contacts, (3) dielectric capacitance in off state which causes current “snapback” during set.
(Color online) I-V curves for CeRAM cell programed using a compliance limit showing a max IReset of approximately .
(Color online) I-V curves for CeRAM cell switching with for consecutive set and reset operations.
(Color online) ROn and ROff resistance of 100 consecutive cycles at room temperature and the corresponding read margine.
(Color online) Read endurance for high (ROff ) and low (ROn ) resistance states of a cell at room temperature with 0.2 V read voltage.
(Color online) Nonvolatile data retention of high and low resistance states at elevated temperatures up to 300°Chx2009; for 1 h.
(Color online) Simulated I-V curves for CeRAM as a function of temperature for the metal case.
(Color online) Simulated I-V curves for CeRAM as a function of temperature for the insulator case.
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