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Metal-semiconductor transition in NiFe2O4 nanoparticles due to reverse cationic distribution by impedance spectroscopy
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10.1063/1.3582142
/content/aip/journal/jap/109/9/10.1063/1.3582142
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3582142
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction pattern of the NiFe2O4 sample recorded at room temperature.

Image of FIG. 2.
FIG. 2.

(Color online) Magnetization against applied field at different temperatures.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Impedance plane plot of the NiFe2O4 sample at room temperature. Inset shows the equivalent circuit model. Arrow shows the direction of increase in frequency. (b) Impedance plane plot at some selected temperatures. Inset shows the impedance plane plot between 363–373 K.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Variation of parameters n g and n gb with temperature, and (b) variation of grains and grain boundary capacitances with temperature for the NiFe2O4 sample.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Variation of R g with temperature, (b) variation of R gb with temperature for the NiFe2O4 sample; inset shows the variation of total resistance with temperature, and (c) total dc conductivity of NiFe2O4 the solid lines are the best fit to the Arrhenius relation.

Image of FIG. 6.
FIG. 6.

(Color online) (a) Variation of tangent loss with frequency. The direction of the arrow shows the increase in temperature, and (b) variation of tangent loss with frequency with the arrow in the direction of the increase in temperature.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Variation of dielectric constant with log f; the direction of the arrow shows the increase in temperature; inset shows a decrease in the dielectric constant with temperature. (b) Variation of ln(σ) with ln(f); inset shows the decrease in conductivity with temperature, and (c) variation of the slope parameter (s) with temperatures at different frequencies.

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/content/aip/journal/jap/109/9/10.1063/1.3582142
2011-05-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-semiconductor transition in NiFe2O4 nanoparticles due to reverse cationic distribution by impedance spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/9/10.1063/1.3582142
10.1063/1.3582142
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