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Study of spin-coated resist coverage on nanoscale topography using spectroscopic ellipsometry
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10.1063/1.3603019
/content/aip/journal/jap/110/1/10.1063/1.3603019
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/1/10.1063/1.3603019

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the 6-inch Si substrate pre-patterned with a 19 mm wideband of 72.6 nm pitch nano-grooves. We measured the spin-coated resist thickness both inside (tpattern ) and outside (tblank ) the patterned area. Since the resist thickness is defined as its volume divided by the area, tpattern is always smaller than the filling height hf.

Image of FIG. 2.
FIG. 2.

(Color online) SE-OCD models for an over-filled (a) and an under-filled (b) structure. The trapezoidal profile Si grating is defined by four parameters: the pitch P (72.6 nm), the etch depth H, the top width WT , and the bottom width WB. The HSQ is assumed to have a flat surface that is at a distance hf from the bottom of the Si trenches.

Image of FIG. 3.
FIG. 3.

(Color online) SEM images of the Si gratings filled with the spin-coated HSQ and the (Ψ, Δ) spectra for samples without and with the HSQ. The SE-OCD best fit models are superimposed on the SEM images for comparison. Both the measured (lines) and the calculated (dots) spectra are presented, which show a close fit.

Image of FIG. 4.
FIG. 4.

(Color online) The HSQ thickness in the patterned area for samples with different etch depths. Within the margin of measurement error, the spin-coated HSQ thickness tpattern shows no observable dependence on the pattern depth.

Image of FIG. 5.
FIG. 5.

(Color online) A simplified model of the spin-coating process: (a) initially, the resist thinning is dominated by a radial outflow driven by the centrifugal force; vr (z) is the relative fluid flow velocity with z = 0 at the crest of the grating and the no-slip boundary condition requires that vr (0) = 0; (b) the transition point where the resist ceases to flow due to the increased viscosity and the reduced film thickness; (c) the final stage where a solid film is formed and the residual solvent evaporation produces a non-planar film over the Si topography.

Tables

Generic image for table
Table I.

Summary of the fitting results.

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/content/aip/journal/jap/110/1/10.1063/1.3603019
2011-07-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of spin-coated resist coverage on nanoscale topography using spectroscopic ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/1/10.1063/1.3603019
10.1063/1.3603019
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