(Color online) Cross-sectional view of NW geometry used in the model (not to scale). Parameter values are listed in Table II.
Illuminated (1 Sun, AM1.5 G) model J-V characteristic for Si bottom cell, nanowire (NW) top cell and series connected two-junction cell (Si + NW). Dashed curves are for imperfect passivation (S nw = 3000 cm s−1, D = 1012 cm−2) and solid curves are for perfect passivation (S nw = 0, D = 0).
Theoretical limiting efficiencies.
Parameters used in the model.
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