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Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell
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10.1063/1.3603029
/content/aip/journal/jap/110/1/10.1063/1.3603029
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/1/10.1063/1.3603029

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-sectional view of NW geometry used in the model (not to scale). Parameter values are listed in Table II.

Image of FIG. 2.
FIG. 2.

Illuminated (1 Sun, AM1.5 G) model J-V characteristic for Si bottom cell, nanowire (NW) top cell and series connected two-junction cell (Si + NW). Dashed curves are for imperfect passivation (S nw = 3000 cm s−1, D = 1012 cm−2) and solid curves are for perfect passivation (S nw = 0, D = 0).

Tables

Generic image for table
Table I.

Theoretical limiting efficiencies.

Generic image for table
Table II.

Parameters used in the model.

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/content/aip/journal/jap/110/1/10.1063/1.3603029
2011-07-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell
http://aip.metastore.ingenta.com/content/aip/journal/jap/110/1/10.1063/1.3603029
10.1063/1.3603029
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